Alexander Usikov is a Principal Scientist at Nitride Crystals, Inc., specializing in Hydride Vapor Phase Epitaxy (HVPE) for III-N device structures and quasi-bulk materials. He earned a PhD in Semiconductor Physics from the Ioffe Physico-Technical Institute, with a career spanning LPE, VPE, MOCVD and HVPE to advance GaN-based thick templates and AlGaInN multi-layer device structures. He has authored over 160 technical papers published in peer-reviewed journals and conference proceedings, along with two book chapters, and holds eight Russian patents and three US patents (one US patent pending), underscoring a strong track record of research translated into practice. His current work focuses on developing novel HVPE equipment and processes to enable scalable growth of III-N devices. Based in the United States, Usikov has previously led production lines for InGaN/GaN LED structures, translating academic insights into manufacturing capabilities. His career blends deep theoretical insight with hands-on leadership in next-generation optoelectronic materials.
9 years of coding experience
M. Sci. in Optoelectronics, M. Sci. in Optoelectronics at St. Petersburg Electrotechnical University (ETU) (former Leningrad Electrotechnical Institute “LETI”
Ph.D. in Semiconductor Physics, The title of the Ph.D. thesis was “Research and development of InGaAsP/InP heterostructures for lase, Ph.D. in Semiconductor Physics, The title of the Ph.D. thesis was “Research and development of InGaAsP/InP heterostructures for lase at A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
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